2002. 10. 23 1/3 semiconductor technical data KTC3631D/l triple diffused npn transistor revision no : 3 high voltage switching. features low collector saturation voltage : v ce(sat) =0.5v(max.) at (i c =0.5a). high switching speed typically. : t f 0.4 s at i c =1a. complementary to kta1862d. wide safe operating area (soa) maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification o:56 120 , y:82 180 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =400v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5.0v, i c =0 - - 1.0 a dc current gain h fe (1) (note) v ce =5.0v, i c =100ma 56 100 180 h fe (2) v ce =5.0v, i c =500ma 6 - - collector saturation voltage v ce(sat) i c =500ma, i b =100ma - 0.3 0.5 v base saturation voltage v be(sat) i c =500ma, i b =100ma - - 1.2 v transition frequency f t v ce =10v, i e =-100ma, f=5mhz - 18 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 30 - pf switching time turn-on time t on i b1 150? b1 i cc v =150v i b2 i b2 20 sec i =-i =0.2a 1% b1 b2 output duty cycle input < = - 0.2 - s storage time t stg - 1.8 - fall time t f - 0.4 - characteristic symbol rating unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current dc i c 2.0 a pulse 4.0 collector power dissipation ta=25 p c 1.3 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/3 KTC3631D/l revision no : 3 i - v be base-emitter voltage v (v) 0 c collector current i (a) cbe 0.003 0.01 0.03 0.05 0.1 0.3 0.5 1.0 ta=25 c v =5.0v ce 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 dc current h 1.0 fe 0.01 0.002 collector current i (a) c c fe h - i 3.0 10 30 100 300 1k ta=25 c 0.1 1.0 2.0 0.03 0.3 0.002 0.03 0.01 0.1 collector current i (a) 0.03 0.01 0.1 1.0 0.3 c 2.0 1.0 0.3 3.0 10 v , v - i ce(sat) c v be(sat) be(sat) saturation voltage i /i =5 c b i /i =10 v c e(sat) c b i /i =5 v ce(sa t ) c b switching characteristic c collector current i (a) 0.1 0.3 3 1 0.1 switching time ( s) 0.5 5 0.3 0.5 i /i =5 v =150v 1.0 3.0 5.0 10 i =-i cb cb b1 b2 t stg f t collector-emitter voltage v (v) collector current i (a) 0 0 1.0 2.0 c i - v cce ce 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 b i =2.0ma 5.0ma 10ma 20ma 40ma 60ma 80ma 100ma 0.005 v =5v ce v ,v (v) ce(sat) be(sat) ta=25 c collector current i (a) 0 c 100 0 collector emitter voltage v (v) ce reverse bias safe operating area l=10mh 200 300 400 500 0.5 1.0 1.5 2.0 2.5 ceo(sus) v cex(sus) v
2002. 10. 23 3/3 KTC3631D/l revision no : 3 collector dissipation pc (w) 0 0 ambient temperature ta ( c) pc - ta 50 100 150 200 2 4 6 8 10 12 tc=ta infinite heat sink no heat sink 1 2 1 2 safe operating area ce collector-emitter voltage v (v) 1310 1 k 0.01 c collector current i (a) i max(pulse) * 10ms* 100ms* dc operat ion 30 100 300 0.03 0.1 0.3 1 3 10 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * c tc=25 c
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